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High Power RF GaN-on-SiC HEMT 630 W, 48 V, 2620 - 2690 MHz
4.4 (51 items)
Limited Time SaleUntil the end
09
02
26
$54.00 cheaper than the new price!!
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New $90.00
Product details
| Management number | 210872396 | Release Date | 2026/04/04 | List Price | $36.00 | Model Number | 210872396 | ||
|---|---|---|---|---|---|---|---|---|---|
| Category | |||||||||
The GTRB266502FC is a 630 W (P3dB) GaN-on-SiC amplifier, designed for multi-standard cellular power applications, offering high efficiency and a thermally-enhanced package with an earless flange.
- Pulsed CW Performance: 2690 MHz, 48V, 10s Pulse Width, 10% Duty Cycle
- Maximum Output Power: 630W at P3dB
- Peak Efficiency: 67% at P3dB
| Model | GTRB266502FC |
|---|---|
| Brand Name | MACOM |
| Manufacturer | MACOM |
| Material Type | GaN-on-SiC |
| Mounting Type | Freestanding |
| Specification Met | FCC |
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